Mouvement et croissance d'un macrodéfaut dans le champ des concentrations de défauts ponctuelsSLEZOV, V. V; TANATAROV, L. V.Metallofizika (Kiev). 1988, Vol 10, Num 2, pp 90-93, issn 0204-3580Article

Some remarks on domain structures generated by disclinationsLEONOV, I. A.Physics letters. A. 1990, Vol 145, Num 8-9, pp 449-450, issn 0375-9601Article

Influence of the interaction potential on defect jumps in a Lennard-Jones latticeVOGELSANG, R; HOHEISEL, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 35, pp 5933-5942, issn 0022-3719Article

The dynamic behaviour of a crystal during defect jumps. III: Distinct correlations during vacancy jumps from molecular dynamics calculationsVOGELSANG, R; HOHEISEL, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 35, pp 5923-5931, issn 0022-3719Article

Influence des contraintes élastiques sur la transformation des amas de défauts dans les semiconducteursSKUPOV, V. D; TETEL'BAUM, D. I.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 8, pp 1495-1497, issn 0015-3222Article

Influence des impuretés isovalentes sources de contraintes élastiques dans le cristal sur le comportement des défauts ponctuelsRYTOVA, N. S; SOLOV'EVA, E. V.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 8, pp 1380-1387, issn 0015-3222Article

Selected papers/Identification of defects in semiconductors, symposium: 7th. international summer school on defects in crystals, Szczyrk, Poland, 23-30 May, 1985FIGIELSKI, T.Acta physica Polonica. A. 1986, Vol 69, Num 3, pp 379-476, issn 0587-4246Conference Proceedings

The Mott-Litteleton method: an introductory surveyLIDIARD, A. B.Journal of the Chemical Society. Faraday Transactions II. 1989, Vol 85, Num 5, pp 341-349, issn 0300-9238, 9 p.Article

Lattice imperfections studied by use of lattice Green's functionsTHOMSON, R; ZHOU, S. J; CARLSSON, A. E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 17, pp 10613-10622, issn 0163-1829Article

Some considerations on the deffect chemistry on ionic solidsFERNANDES, V. M. G; SEQUEIRA, C. A. C.Czechoslovak journal of physics. 1990, Vol 40, Num 10, pp 1140-1155, issn 0011-4626, 16 p.Article

Chathodoluminescence measurement of surfaces in reflection high-energy electron diffraction experimentsMIYAUCHI, M; SHIBATA, N.Japanese journal of applied physics. 1993, Vol 32, Num 8B, pp L1179-L1181, issn 0021-4922, 2Article

Vitesse de croissance diffusionnelle des macrodéfauts dans les ensemblesSLEZOV, V. V.Fizika tverdogo tela. 1989, Vol 31, Num 8, pp 20-30, issn 0367-3294Article

Proceedings of the international conference on defects in insulating crystals: [selected papers], August 29-September 2, 1988, ParmaCAPELLETTI, Rosanna.Crystal lattice defects and amorphous materials. 1989, Vol 18, Num 1-3, issn 0732-8699, 417 p.Conference Proceedings

Revealing of lattice defects on {001} GaAs surfaces by KI:I:H₂SO₄-etchantGOTTSCHALCH, V; HERRNBEGER, H.Journal of materials science letters. 1990, Vol 9, Num 1, pp 7-10, issn 0261-8028, 4 p.Article

Gauge theory of defect systems and equivalence principleHOLZ, A.Physica status solidi. B. Basic research. 1987, Vol 144, Num 1, pp 49-71, issn 0370-1972Article

Réaction oscillante de réarrangement des défauts dans le siliciumKUCHINSKIJ, P. V; LOMAKO, V. M; SHAKHLEVICH, L. N et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 45, Num 7, pp 350-352, issn 0370-274XArticle

The continuized crystal: a bridge between micro- and macromechanics?KRÖNER, E.Zeitschrift für angewandte Mathematik und Mechanik. 1986, Vol 66, Num 5, pp T.284-T.292, issn 0044-2267Article

High resolution transmission electron microscopy of some catalystsQIAO, G. W; ZHOU, J; KUO, K. H et al.Zeitschrift für Naturforschung. Teil A : Physik, physikalische Chemie, Kosmophysik. 1986, Vol 41, Num 3, pp 478-482, issn 0340-4811Article

Dynamics of disclinations in liquid crystalsPISMEN, L. M; RUBINSTEIN, J.Quarterly of applied mathematics. 1992, Vol 50, Num 3, pp 535-545, issn 0033-569XArticle

Application de la technique capacitive de spectrométrie transitoire de niveaux profonds à l'étude des semiconducteurs ayant une distribution non uniforme d'impuretés (défauts)ANTONOVA, I. V; VASIL'EV, A. V; PANOV, V. I et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 6, pp 998-1002, issn 0015-3222Article

Tipokhimizm mineralov: anomal'naya kontsentratsiya mikroprimesej v tverdykh rastvorakh s defektnoj strukturojABRAMOVICH, M.G; SHMAKIN, B.M; TAUSON, V.L et al.Zapiski Vsesoûznogo mineralogičeskogo obŝestva. 1990, Vol 119, Num 1, pp 13-22, issn 0044-1805Article

Defect and phase analysis of scandium hydride by transmission electron microscopyHERLEY, P. J; JONES, W.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1989, Vol 114, pp L1-L3, issn 0921-5093Article

Feldionenmikroskopie der Gitterstörungen im Metallkristallen = Microscopie ionique à émission de champ pour l'étude des défauts cristallins dans les cristaux métalliques = Field ion microscopy of lattice defects in metallic crystalsKRAUTZ, E.Optik (Stuttgart). 1987, Vol 77, Num 1, pp 35-38, issn 0030-4026Article

Defect structures in laser-fused Si-SiO₂ wafersGEYSELAERS, M. L; HAISMA, J; WIDDERSHOVEN, F. P et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1311-1313, issn 0003-6951, 3 p.Article

Theory of LEED in crystals with defectsLITZMAN, O; DUB, P.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 33, pp 5449-5458, issn 0022-3719Article